sa12b5 SA16B3 / sa16b6 ? april 1999 - ed: 1 12-bit (sa12) or 16-bit (sa16) dual schottky diode arrays reverse voltage : v rrm = 7.5 v forward voltage v f < 1.3 v features so-16 provides impedance matching, and minimizes distortion. lowers emi / rfi radiation. eliminates negative voltage : minimizes risk of latch-up for sensitive ics. saves valuable space on board. benefits schottky arrays application specific discretes a.s.d. tm any electronic equipment where suitable bus termination is required to avoid signal reflections and distortions : pcs workstations high frequency processor boards dataline interface main applications dedicated to bus termination, the schottky arrays sa12b5, SA16B3 and sa16b6 minimise stray emissions from pcb tracks. they provide suitable termination by avoiding signal reflexions and distortions. description so-20 ssop20 - mil std 883c - method 3015-6 - class 3 - iec1000-4-2 level 4 complies with following standard : 1/5
functional diagram (so-20 and ssop20) functional diagram (so-16) v ss v ss v cc v cc 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 1 20 10 v ss v cc v cc 11 v ss 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 symbol parameter and test conditions value unit p power dissipation so-20 so-16 and ssop20 1250 850 mw v op maximum operating voltage (v cc - v ss ) 7.5 v v pp maximum electrostatic discharge mil std 883c - method 3015-6 / iec1000-4-2 contact 8kv t op operating temperature range (see note 1) -40 to +85 c t stg storage temperature range -55 to +150 c t l maximum lead temperature for soldering during 10s 260 c t j maximum junction temperature 150 c note 1: within the top range, the saxx keep on operating. the impacts of the ambient temperature are given by derating curves on the f ollowing page. absolute maximum ratings (t amb = 25 c) symbol parameter and test conditions typ. max. unit i r leakage current @ v rrm = 7.5 v 5 m a v f forward voltage (see note 2) ipp = 18 ma i pp = 50 ma 1.05 1.3 v c d capacitance v bias = 0v, f = 1mhz 16 pf note 2: for both pull-up and pull-down schotty diodes. electrical characteristics (t amb = 25c) symbol parameter packages value unit r th(j-a) junction to ambient so-16 and ssop20 so-20 140 100 c/w thermal resistance sa12b5 / SA16B3 / sa16b6 2/5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1e-4 1e-3 1e-2 1e-1 1e+0 ipp(a) tj=25c tj=85c tp=2.5s tj=-40c vcl(v) fig1-1: clamping forward voltage versus peak pulse current (typical values, low level). 0 25 50 75 100 125 1e-2 1e-1 1e+0 1e+1 1e+2 tj(c) ir(a) vr=7.5v fig 2: leakage current versus junction tempera- ture (typical values). 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ifsm[tj] / ifsm[tj=25c] tj(c) fig 4: non repetitive surge peak forward current versus initial junction temperature. 01234567 0.1 1.0 5.0 ipp(a) tj=25c tp=2.5s vcl(v) fig1-2: clamping forward voltage versus peak pulse current (typical values, high level). 1 10 100 1000 1 2 5 10 tp(s) ifsm(a) tj initial =25c fig 3: non repetitive surge peak forward current versus pulse duration (rectangular waveform). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 16 18 20 22 24 26 28 30 vi/o-gnd(v) ci/o(pf) vcc=5v f=1mhz vosc=30mv fig 5: capacitance between input or output and ground versus applied voltage (typical values). sa12b5 / SA16B3 / sa16b6 3/5
typical application vcc p high speed memory bus saxxbx package mechanical data so-16 9 8 1 16 d (1) m f (1) b e3 e a a2 g l c c1 b1 a1 e s (1) do not include mold flash or protrusions. mold flash or protrusions shall not exceed 0.15mm (0.006inches) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.75 0.069 a1 0.1 0.20 0.004 0.008 a2 1.6 0.063 b 0.35 0.46 0.014 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.020 c1 45(typ.) d 9.8 10 0.386 0.394 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 8.89 0.350 f 3.8 4.0 0.150 0.158 g 4.6 5.3 0.181 0.209 l 0.5 1.27 0.020 0.050 m 0.75 0.030 s8(typ.) weight : 0.160g type package marking sa12b5 so16 sa12b5 SA16B3 so20 SA16B3 sa16b6 ssop20 sa16b6 marking sa12b5 / SA16B3 / sa16b6 4/5
package mechanical data so-20 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.35 2.65 0.092 0.104 a1 0.10 0.20 0.004 0.008 b 0.33 0.51 0.013 0.020 c 0.23 0.32 0.009 0.013 d 12.6 13.0 0.484 0.512 e 7.40 7.60 0.291 0.299 e 1.27 0.050 h 10.0 10.65 0.394 0.419 h 0.25 0.75 0.010 0.029 l 0.50 1.27 0.020 0.050 k8 (max) ssop20 l b1 a1 e s b e a a2 11 10 1 20 d f ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.00 0.079 a1 0.25 0.010 a2 1.51 2.00 0.059 0.079 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.10 0.35 0.004 0.014 d 7.05 8.05 0.278 0.317 e 7.60 8.70 0.299 0.343 e1 5.02 6.10 6.22 0.198 0.240 0.245 e 0.65 0.026 k 0 10 0 10 l 0.25 0.50 0.80 0.010 0.020 0.031 weight : 0.520g weight : 0.180g information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com sa12b5 / SA16B3 / sa16b6 5/5
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